IRF40DM229 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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IRF40DM229
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حجم فایل
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76.681
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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12
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies IRF40DM229
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
83W
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Total Gate Charge (Qg@Vgs):
161nC@10V
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Drain Source Voltage (Vdss):
40V
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Input Capacitance (Ciss@Vds):
5317pF@25V
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Continuous Drain Current (Id):
159A
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Gate Threshold Voltage (Vgs(th)@Id):
3.9V@100uA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1.85mΩ@97A,10V
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Package:
DirectFET
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Manufacturer:
Infineon Technologies
